Plasma processing apparatus

US8940128B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-8940128-B2
Application numberUS-85342710-A
CountryUS
Kind codeB2
Filing dateAug 10, 2010
Priority dateJun 2, 2010
Publication dateJan 27, 2015
Grant dateJan 27, 2015

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

The invention aims at suppressing the self bias generated at the surface of the inner wall of the vacuum processing chamber, to thereby suppress the chipping of the inner wall surface of the vacuum processing chamber or the consumption of the inner parts of the vacuum processing chamber. The present invention provides a plasma processing apparatus comprising a vacuum processing chamber, a vacuum processing chamber lid sealing an upper portion of the vacuum processing chamber, an induction antenna, a Faraday shield disposed between the induction antenna and the vacuum processing chamber lid, and a high frequency power supply for supplying high frequency power to the induction antenna, wherein the induction antenna is divided into two or more parts, the Faraday shield is divided into a division number corresponding to the division number of the induction antenna, and high frequency voltages are applied thereto via a matching box from the one high frequency power supply.

First claim

Opening claim text (preview).

What is claimed is: 1. A plasma processing apparatus comprising: a vacuum processing chamber; a vacuum processing chamber lid sealing an upper portion of the vacuum processing chamber; a first induction antenna arranged above the vacuum processing chamber lid; a second induction antenna arranged above the vacuum processing chamber lid and arranged outside of the first induction antenna; a first Faraday shield disposed between the first induction antenna and the vacuum proc…

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What does patent US8940128B2 cover?
The invention aims at suppressing the self bias generated at the surface of the inner wall of the vacuum processing chamber, to thereby suppress the chipping of the inner wall surface of the vacuum processing chamber or the consumption of the inner parts of the vacuum processing chamber. The present invention provides a plasma processing apparatus comprising a vacuum processing chamber, a vacuu…
Who is the assignee on this patent?
Sakka Yusaku, Nishio Ryoji, Yoshioka Ken, and 1 more
What technology area does this patent fall under?
Primary CPC classification H05H1/46. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Jan 27 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).