Apparatus for growth of single crystals including a solute feeder

Patent metadata

Field	Value
Publication number	US-8940095-B2
Application number	US-201113289273-A
Country	US
Kind code	B2
Filing date	Nov 4, 2011
Priority date	Sep 1, 2004
Publication date	Jan 27, 2015
Grant date	Jan 27, 2015

Abstract

An apparatus for growth of uniform multi-component single crystals is provided. The single crystal material has at least three elements and has a diameter of at least 50 mm, a dislocation density of less than 100 cm −2 and a radial compositional variation of less than 1%.

First claim

The invention claimed is:

1. A single crystal growth apparatus, comprising:
a vessel;
a crystal growth seed mounting area in the vessel;
a crystal growth area in the vessel adjacent to the crystal growth seed mounting area;
a synthesizing melt area in the vessel;
a thermal barrier separating the crystal growth area from the synthesizing melt area, the thermal barrier containing at least one opening connecting the crystal growth area to the synthesizing melt area; a growth melt; a synthesizing melt;
a solute source, wherein the solute source has a chemical composition substantially different than the synthesizing melt;
a solute feeder adapted to provide a solute into the synthesizing melt area during crystal growth;
a heating element adapted to heat the vessel to form the growth melt in the crystal growth area and to form the synthesizing melt in the synthesizing melt area,
wherein the vessel is oriented vertically, such that the crystal growth seed area is located on a bottom of the vessel, the synthesizing melt area is at a top of the vessel and the crystal growth area is located between the seed and the synthesizing melt area, and wherein:
the vessel comprises a first crucible containing the crystal growth seed area and the growth melt area and a second crucible containing the synthesizing melt area;
the thermal barrier comprises a bottom wall of a second crucible containing the at least one opening; and
the second crucible is located at least partially in the first crucible.

2. The apparatus of claim 1 , wherein the heating element is adapted to maintain a temperature difference between the thermal barrier and a crystal growth surface over the crystal growth seed of 1° C. or less, and a temperature difference between the thermal barrier and a location in the synthesizing melt where the solute is provided of 20° C. or more.

3. The apparatus of claim 2 , further comprising:
a stirrer located in the synthesizing melt area; and
motor adapted to rotate the vessel about its axis.

4. The apparatus of claim 1 , wherein:
the thermal barrier substantially prevents thermal transfer between the synthesizing melt and the growth melt but allows solute transport from the synthesizing melt to the growth melt by solute diffusion through the at least one opening; and
the at least one opening comprises one or more openings located in the thermal barrier, one or more openings located between the thermal barrier and an internal wall of the vessel, or a plurality of openings located in the thermal barrier and between the thermal barrier and an internal wall of the vessel.

5. The apparatus of claim 1 , wherein the thermal barrier is located 0.5 cm or less from the upper single crystal surface during the growth of the single crystal, and the at least one opening comprises one or more openings having a width of 2 mm or less.

6. The apparatus of claim 1 , wherein the solute feeder comprises a solid solute feeder vessel having at least one opening which is adapted to be periodically dipped into a melt located in the synthesizing melt area.

7. The apparatus of claim 1 , wherein:
the thermal barrier comprises a thermally insulating material.

8. The apparatus of claim 1 , wherein the solute feeder comprises a liquid solute feeder vessel adapted to provide a liquid solute into the vessel.

9. The apparatus of claim 1 , wherein:
the solute source has a higher melting point than the synthesis melt.

10. The apparatus of claim 3 , wherein the motor is adapted to rotate the vessel in an accelerated crucible rotation method.

11. The apparatus of claim 7 , wherein the thermal barrier is configured to oscillate in a vertical direction.

12. The apparatus of claim 11 , wherein the thermal barrier is configured to oscillate in a vertical direction a distance by 1-2 mm.

13. The apparatus of claim 3 , wherein the motor is adapted to produce forced convective mixing in the growth melt.

Assignees

• Dutta Partha
• Rensselaer Polytech Inst

Inventors

• Dutta Partha

Classifications

• Y10T117/1028

  Crucibleless apparatus having means providing movement of discrete droplets or solid particles to thin-film precursor [e.g., Verneuil method] · CPC title

• Y10T117/10

  Apparatus · CPC title

• C30B29/40

  AIIIBV compounds {wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi} · CPC title

• C30B29/403

  AIII-nitrides · CPC title

• C30B11/06 Primary

  at least one but not all components of the crystal composition being added · CPC title