Metal gates for semiconductor devices and method thereof
US-2024429281-A1 · Dec 26, 2024 · US
Reduction of defect rates in PFET transistors comprising a Si/Ge semiconductor material formed by epitaxial growth
US8939765B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8939765-B2 |
| Application number | US-96511810-A |
| Country | US |
| Kind code | B2 |
| Filing date | Dec 10, 2010 |
| Priority date | May 31, 2010 |
| Publication date | Jan 27, 2015 |
| Grant date | Jan 27, 2015 |
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Abstract
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In sophisticated semiconductor devices, the defect rate that may typically be associated with the provision of a silicon/germanium material in the active region of P-channel transistors may be significantly decreased by incorporating a carbon species prior to or during the selective epitaxial growth of the silicon/germanium material. In some embodiments, the carbon species may be incorporated during the selective growth process, while in other cases an ion implantation process may be used. In this case, superior strain conditions may also be obtained in N-channel transistors.
First claim
Opening claim text (preview).
What is claimed: 1. A method, comprising: recessing an active region of a P-channel transistor; forming a layer of crystalline silicon/germanium alloy material in said recess and on a semiconductor material of said active region; providing a carbon species at least at an interface formed between said layer of crystalline silicon/germanium alloy material and said semiconductor material, wherein said provided carbon species is incorporated into said active region prior to recess…
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Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
- H10D84/0167Primary
Electricity · mapped topic
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- What does patent US8939765B2 cover?
- In sophisticated semiconductor devices, the defect rate that may typically be associated with the provision of a silicon/germanium material in the active region of P-channel transistors may be significantly decreased by incorporating a carbon species prior to or during the selective epitaxial growth of the silicon/germanium material. In some embodiments, the carbon species may be incorporated d…
- Who is the assignee on this patent?
- Kronholz Stephan, Javorka Peter, Wiatr Maciej, and 3 more
- What technology area does this patent fall under?
- Primary CPC classification H10D84/0167. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Jan 27 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).