Management of Memory Access by Processors through High Bandwidth Interconnects to Memory Sub-Systems
US-2024372621-A1 · Nov 7, 2024 · US
US8938142B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8938142-B2 |
| Application number | US-201113324251-A |
| Country | US |
| Kind code | B2 |
| Filing date | Dec 13, 2011 |
| Priority date | Dec 15, 2010 |
| Publication date | Jan 20, 2015 |
| Grant date | Jan 20, 2015 |
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A silicon-based opto-electronic circuit is formed to exhibit reduced polarization-dependent loss by strategically placing the photodetecting device as close as possible to the entry point of the optical signal into the opto-electronic circuit arrangement. While the incoming optical signal will include both TE and TM modes, by minimizing the length of the optical waveguide path along which the signal must propagate before reaching a photodetector, the attenuation associated with TM mode signal will be negligible.
Opening claim text (preview).
What is claimed is: 1. A silicon-based opto-electronic circuit formed on a silicon substrate, the circuit comprising: an optical waveguide of a predetermined length separating an input of the optical waveguide from an output of the optical waveguide, the optical waveguide is formed in the silicon substrate and configured to receive an optical signal at the input of the optical waveguide, wherein the optical signal exhibits both transverse electric (TE) and transverse magnetic (TM)…
Physics · mapped topic
Physics · mapped topic
Physics · mapped topic
Physics · mapped topic
Physics · mapped topic
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