Circuits and Techniques for Detecting an Open Pin Condition of an Integrated Circuit
US-2015362550-A1 · Dec 17, 2015 · US
Method for testing through-silicon-via
US8937486B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8937486-B2 |
| Application number | US-201313939408-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jul 11, 2013 |
| Priority date | Oct 1, 2009 |
| Publication date | Jan 20, 2015 |
| Grant date | Jan 20, 2015 |
How to read this patent
A practical reading order for non-experts. Skip the full description unless you need deep technical detail.
- Title
What the patent document calls the invention.
- Abstract
A short plain-language summary of the technical disclosure.
- Assignees and inventors
Who owns or filed the patent and who is credited as inventor.
- Key dates
Filing, priority, publication, and grant dates set the timeline.
- First independent claim
The legal scope of protection — read this for what is actually claimed.
- CPC / IPC classifications
Technology tags used to group this patent with similar filings.
- Citations and related patents
Prior art links and similar publications in this corpus.
Abstract
Official abstract text for this publication.
A method for testing a TSV comprises charging a through-silicon-via under test to a first predetermined voltage level charging a capacitance device to a second predetermined voltage level; performing charge-sharing between the through-silicon-via and the capacitance device; and determining that the through-silicon-via under test is not faulty if the voltage level of the through-silicon-via after the charge-sharing step is within a predetermined range.
First claim
Opening claim text (preview).
What is claimed is: 1. A method for testing a through-silicon-via, comprising the steps of: charging a through-silicon-via under test to a first predetermined voltage level; charging a capacitance device to a second predetermined voltage level; performing charge-sharing between the through-silicon-via and the capacitance device; and determining that the through-silicon-via under test is not faulty if the voltage level of the through-silicon-via after the charge-sharing step…
Assignees
Inventors
Classifications
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Patent family
Related publications grouped by family.
External sources
Next steps
Free tools are coming soon. Tell us what you want to track and we'll notify you.
Frequently asked questions
Answers are generated from the same data shown on this page.
- What does patent US8937486B2 cover?
- A method for testing a TSV comprises charging a through-silicon-via under test to a first predetermined voltage level charging a capacitance device to a second predetermined voltage level; performing charge-sharing between the through-silicon-via and the capacitance device; and determining that the through-silicon-via under test is not faulty if the voltage level of the through-silicon-via afte…
- Who is the assignee on this patent?
- Nat Univ Tsing Hua
- What technology area does this patent fall under?
- Primary CPC classification G01R31/2853. Mapped technology areas include Physics.
- When was this patent published?
- Publication date Tue Jan 20 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).