Power transfer system and noncontact charging device

US8937409B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-8937409-B2
Application numberUS-201113332455-A
CountryUS
Kind codeB2
Filing dateDec 21, 2011
Priority dateJun 25, 2009
Publication dateJan 20, 2015
Grant dateJan 20, 2015

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

A high-voltage side conductor is formed near the upper surface of a power transmission device, and a low-voltage side conductor is formed near the lower surface of the power transmission device. The power transmission device includes an alternating voltage generating circuit. A high-voltage side conductor is formed near the lower surface of a power reception device, and a low-voltage side conductor is formed near the upper surface of the power reception device. The power reception device includes a load circuit. When the high-voltage side conductors face a capacitive coupling conductor of an auxiliary sheet, capacitances are generated respectively between the high-voltage side conductors and the capacitive coupling conductor. Thus, the high-voltage side conductors are capacitively coupled to each other via the capacitive coupling conductor.

First claim

Opening claim text (preview).

The invention claimed is: 1. A power transfer system comprising: a power transmission device having a power transmission capacitive coupling electrode that includes a power transmission high-voltage side conductor and a power transmission low-voltage side conductor; a power reception device having a power reception capacitive coupling electrode that includes a power reception high-voltage side conductor and a power reception low-voltage side conductor; a capacitive coupling co…

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What does patent US8937409B2 cover?
A high-voltage side conductor is formed near the upper surface of a power transmission device, and a low-voltage side conductor is formed near the lower surface of the power transmission device. The power transmission device includes an alternating voltage generating circuit. A high-voltage side conductor is formed near the lower surface of a power reception device, and a low-voltage side condu…
Who is the assignee on this patent?
Ichikawa Keiichi, Bondar Henri, Murata Manufacturing Co
What technology area does this patent fall under?
Primary CPC classification H02J7/70. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Jan 20 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).