Compound semiconductor device, method of manufacturing the same, power supply device and high-frequency amplifier

Patent metadata

Field	Value
Publication number	US-8937337-B2
Application number	US-201113152421-A
Country	US
Kind code	B2
Filing date	Jun 3, 2011
Priority date	Aug 31, 2010
Publication date	Jan 20, 2015
Grant date	Jan 20, 2015

Abstract

A compound semiconductor device includes a substrate having an opening formed from the rear side thereof; a compound semiconductor layer disposed over the surface of the substrate; a local p-type region in the compound semiconductor layer, partially exposed at the end of the substrate opening; and a rear electrode made of a conductive material, disposed in the substrate opening so as to be connected to the local p-type region.

First claim

I claim:

1. A compound semiconductor device, comprising:
a substrate;
a compound semiconductor layer disposed over the surface of the substrate;
a source electrode, a drain electrode and a gate electrode formed over the compound semiconductor layer;
an opening penetrates the substrate and formed in the compound semiconductor layer under a position with the source electrode;
a local p-type region partially formed in the compound semiconductor layer under the position with t…

Assignees

• Minoura Yuichi
• Fujitsu Ltd

Inventors

• Minoura Yuichi

Classifications

• H10D62/8503

  Electricity · mapped topic

• H10W20/021

  Electricity · mapped topic

• H10D64/252

  Electricity · mapped topic

• H10D62/854

  Electricity · mapped topic

• H10D62/107

  Electricity · mapped topic