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US-12183868-B2 · Dec 31, 2024 · US
Semiconductor light emitting device
US8937331B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8937331-B2 |
| Application number | US-201313847643-A |
| Country | US |
| Kind code | B2 |
| Filing date | Mar 20, 2013 |
| Priority date | Jan 21, 2013 |
| Publication date | Jan 20, 2015 |
| Grant date | Jan 20, 2015 |
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- Title
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Abstract
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According to one embodiment, a semiconductor light emitting device includes: a mounting substrate; a semiconductor light emitting element; a first resin; and a second resin. The semiconductor light emitting element includes: a semiconductor layer including a light emitting layer; a p-side electrode; a p-side interconnection unit; an n-side electrode; and an n-side interconnection unit. The first resin covers a periphery of the semiconductor light emitting element on the substrate and contains a phosphorescent substance capable of being excited by emission light of the light emitting layer. The second resin is provided on the first resin layer and the semiconductor light emitting element and contains a fluorescent body capable of being excited by emission light of the light emitting layer to emit light of a different peak wavelength from emission light of the light emitting layer.
First claim
Opening claim text (preview).
What is claimed is: 1. A semiconductor light emitting device comprising: a mounting substrate having a mounting surface; a plurality of semiconductor light emitting elements disposed on the mounting surface, each of the plurality of semiconductor light emitting elements comprising: a semiconductor layer including a light emitting layer; a p-side electrode connected to the semiconductor layer; a p-side interconnection unit; an n-side electrode connected to the semiconducto…
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Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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Frequently asked questions
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- What does patent US8937331B2 cover?
- According to one embodiment, a semiconductor light emitting device includes: a mounting substrate; a semiconductor light emitting element; a first resin; and a second resin. The semiconductor light emitting element includes: a semiconductor layer including a light emitting layer; a p-side electrode; a p-side interconnection unit; an n-side electrode; and an n-side interconnection unit. The firs…
- Who is the assignee on this patent?
- Toshiba Kk
- What technology area does this patent fall under?
- Primary CPC classification H10H20/8512. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Jan 20 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).