Techniques for generating three dimensional structures

Patent metadata

Field	Value
Publication number	US-8937019-B2
Application number	US-201313855173-A
Country	US
Kind code	B2
Filing date	Apr 2, 2013
Priority date	Apr 3, 2012
Publication date	Jan 20, 2015
Grant date	Jan 20, 2015

Abstract

Techniques for forming a three dimensional (3D) feature on a substrate are disclosed. In one exemplary embodiment, the technique may be realized as a method comprising: forming a resist structure on the substrate, the resist structure having a first resist portion with a first thickness, a second resist portion with a second thickness, and a third resist portion with a third thickness, where the first thickness may be less than the second thickness, and where the second thickness may be less than the third thickness; implanting charged particles into the substrate through the first and second resist portions and forming an implanted region in the substrate; and etching the substrate to form the 3D feature on the substrate.

First claim

What is claimed is:

1. A method of forming a three dimensional (3D) feature on a substrate, the method comprising:
forming a resist structure on the substrate, the resist structure having a first resist portion with a first thickness, a second resist portion with a second thickness, and a third resist portion with a third thickness, wherein the first thickness is less than the second thickness, and wherein the second thickness is less than the third thickness;
implanting charged…

Assignees

• Varian Semiconductor Equipment

Inventors

• England Jonathan G
• Martin Patrick M
• Cox David

Classifications

• H10P50/73

  Electricity · mapped topic

• G03F7/2016

  Physics · mapped topic

• G03F7/004

  Physics · mapped topic

• G03F7/0002 Primary

  Physics · mapped topic

• B44C1/227 Primary

  Operations & Transport · mapped topic