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Nitride electronic device and method for manufacturing the same
US8937002B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8937002-B2 |
| Application number | US-201414230031-A |
| Country | US |
| Kind code | B2 |
| Filing date | Mar 31, 2014 |
| Priority date | Jul 19, 2011 |
| Publication date | Jan 20, 2015 |
| Grant date | Jan 20, 2015 |
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Abstract
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The present disclosure relates to a nitride electronic device and a method for manufacturing the same, and particularly, to a nitride electronic device and a method for manufacturing the same that can implement various types of nitride integrated structures on the same substrate through a regrowth technology (epitaxially lateral over-growth: ELOG) of a semi-insulating gallium nitride (GaN) layer used in a III-nitride semiconductor electronic device including Group III elements such as gallium (Ga), aluminum (Al) and indium (In) and nitrogen.
First claim
Opening claim text (preview).
What is claimed is: 1. A method for manufacturing a nitride electronic device, comprising: forming an epitaxial structure in which a low temperature buffer layer, a first semi-insulating nitride layer, a first channel layer and a first barrier layer are sequentially stacked on a substrate; stacking a first dielectric layer for forming a pattern on the first barrier layer and partially etching the first barrier layer, the first channel layer and the first semi-insulating nitride…
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Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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- What does patent US8937002B2 cover?
- The present disclosure relates to a nitride electronic device and a method for manufacturing the same, and particularly, to a nitride electronic device and a method for manufacturing the same that can implement various types of nitride integrated structures on the same substrate through a regrowth technology (epitaxially lateral over-growth: ELOG) of a semi-insulating gallium nitride (GaN) laye…
- Who is the assignee on this patent?
- Korea Electronics Telecomm
- What technology area does this patent fall under?
- Primary CPC classification H10D84/05. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Jan 20 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).