Power semiconductor device and method for producing a power semiconductor device
US-2024170566-A1 · May 23, 2024 · US
Methods related to power semiconductor devices with thick bottom oxide layers
US8936985B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8936985-B2 |
| Application number | US-201213418128-A |
| Country | US |
| Kind code | B2 |
| Filing date | Mar 12, 2012 |
| Priority date | May 20, 2003 |
| Publication date | Jan 20, 2015 |
| Grant date | Jan 20, 2015 |
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- Title
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Abstract
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A method can include forming a drift region, forming a well region above the drift region, and forming an active trench extending through the well region and into the drift region. The method can include forming a first source region in contact with a first sidewall of the active trench and a second source region in contact with a second sidewall of the active trench. The method also includes forming a charge control trench where the charge control trench is aligned parallel to the active trench and laterally separated from the active trench by a mesa region, and where the portion of the well region is in contact with the charge control trench and excludes any source region. The method also includes forming an oxide along a bottom of the active trench having a thickness greater than a thickness of an oxide along the first sidewall of the active trench.
First claim
Opening claim text (preview).
What is claimed is: 1. A method of manufacturing a semiconductor device, comprising: forming a drift region of a first conductivity type; forming a well region above the drift region and having a second conductivity type opposite the first conductivity type; forming an active trench extending through the well region and into the drift region; forming a first source region in contact with a first sidewall of the active trench and a second source region in contact with a secon…
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Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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Frequently asked questions
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- What does patent US8936985B2 cover?
- A method can include forming a drift region, forming a well region above the drift region, and forming an active trench extending through the well region and into the drift region. The method can include forming a first source region in contact with a first sidewall of the active trench and a second source region in contact with a second sidewall of the active trench. The method also includes f…
- Who is the assignee on this patent?
- Challa Ashok, Elbanhawy Alan, Probst Dean E, and 11 more
- What technology area does this patent fall under?
- Primary CPC classification H10D30/66. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Jan 20 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).