Method of manufacturing semiconductor lasers

Patent metadata

Field	Value
Publication number	US-8936951-B2
Application number	US-201313776428-A
Country	US
Kind code	B2
Filing date	Feb 25, 2013
Priority date	Oct 15, 2012
Publication date	Jan 20, 2015
Grant date	Jan 20, 2015

Abstract

Provided are a semiconductor laser and a method of manufacturing the same. The method includes: providing a substrate including a buried oxide layer; forming patterns, which includes an opening part to expose the substrate, by etching the buried oxide layer; forming a germanium single crystal layer in the opening part; and forming an optical coupler, which is adjacent to the germanium single crystal layer, on the substrate.

First claim

What is claimed is:

1. A method of manufacturing a semiconductor laser, the method comprising:
providing a substrate including a buried oxide layer;
forming patterns, which includes an opening part to expose the substrate, by etching the buried oxide layer;
forming a germanium single crystal layer in the opening part; and
forming an optical coupler, which is adjacent to the germanium single crystal layer, on the substrate.

2. The method of claim 1 , wh…

Assignees

• Korea Electronics Telecomm

Inventors

• Kim In Gyoo
• Kim Gyungock
• Kim Sang Hoon
• Jang Ki Seok
• Joo Jiho

Classifications

• H01S5/04257

  Electricity · mapped topic

• H01S5/0071

  Electricity · mapped topic

• G02B6/12004 Primary

  Physics · mapped topic

• H01S5/026

  Electricity · mapped topic

• Y10S438/933

  Cross-Sectional Technologies · mapped topic