Semiconductor device having stick drivers and a method of manufacturing the same

Patent metadata

Field	Value
Publication number	US-8934066-B2
Application number	US-201213661497-A
Country	US
Kind code	B2
Filing date	Oct 26, 2012
Priority date	Mar 13, 2000
Publication date	Jan 13, 2015
Grant date	Jan 13, 2015

Abstract

A pixel TFT formed in a pixel region is formed on a first substrate by a channel etch type reverse stagger type TFT, and patterning of a source region and a drain region, and patterning of a pixel electrode are performed by the same photomask. A driver circuit formed by using TFTs having a crystalline semiconductor layer, and an input-output terminal dependent on the driver circuit, are taken as one unit. A plurality of units are formed on a third substrate, and afterward the third substrate is partitioned into individual units, and the obtained stick drivers are mounted on the first substrate.

First claim

What is claimed is:

1. A semiconductor device comprising:
a first gate wiring on an insulating surface;
a second gate wiring on the insulating surface, wherein the second gate wiring extends in parallel with the first gate wiring;
a gate electrode on the insulating surface, the gate electrode being in electrical contact with the first gate wiring;
an insulating film over the first gate wiring and the gate electrode;
a semiconductor film over the insulating film, the semico…

Assignees

• Semiconductor Energy Lab

Inventors

• Yamazaki Shunpei
• Koyama Jun
• Arai Yasuyuki
• Kuwabara Hideaki

Classifications

• H10D30/6721

  Electricity · mapped topic

• H10D86/481

  Electricity · mapped topic

• H10D86/441

  Electricity · mapped topic

• H10D86/431

  Electricity · mapped topic

• H10D86/0231

  Electricity · mapped topic