Image sensor
US-2024380999-A1 · Nov 14, 2024 · US
US8934036B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8934036-B2 |
| Application number | US-201314027708-A |
| Country | US |
| Kind code | B2 |
| Filing date | Sep 16, 2013 |
| Priority date | Apr 3, 2008 |
| Publication date | Jan 13, 2015 |
| Grant date | Jan 13, 2015 |
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A solid state imaging device including multiple unit pixels including a photoelectric converter generating electrical charge in accordance with incident light quantity and accumulating the charge, a first transfer gate transferring the accumulated charge, a charge holding region holding the transferred charge, a second transfer gate transferring the held charge, and a floating diffusion region converting the transferred charge into voltage; an intermediate charge transfer unit transferring, to the charge holding region, a charge exceeding a predetermined charge amount as a first signal charge; and a pixel driving unit setting the first transfer gate to a non-conducting state, set the second transfer gate to a conducting state, transfer the first signal charge to the floating diffusion region, set the second transfer gate to a non-conducting state, set the first transfer gate to a conducting state, and transfer the accumulated charge to the charge holding region as a second signal charge.
Opening claim text (preview).
What is claimed is: 1. A solid state imaging device comprising: (1) a unit pixel including (a) a photoelectric converter configured to generate electrical charge in accordance with incident light quantity and accumulate the charge therein, (b) a first transfer gate configured to transfer the charge accumulated in the photoelectric converter, (c) a charge holding region configured to hold the charge transferred from the photoelectric converter by the first transfer gate, (d)…
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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