Semiconductor device

Patent metadata

Field	Value
Publication number	US-8933568-B2
Application number	US-90746810-A
Country	US
Kind code	B2
Filing date	Oct 19, 2010
Priority date	Mar 12, 2010
Publication date	Jan 13, 2015
Grant date	Jan 13, 2015

Abstract

A semiconductor device according to the present invention includes: a power semiconductor element that is a semiconductor element; bonding parts provided for bonding of an upper surface and a lower surface of the semiconductor element; and metal plates bonded to the power semiconductor element from above and below through the bonding parts, wherein the bonding part includes a mesh metal body disposed between the semiconductor element and the metal plate, and a bonding member in which the mesh metal body is embedded.

First claim

What is claimed is:

1. A semiconductor device, comprising:
a semiconductor element;
bonding parts provided for bonding of an upper surface and a lower surface of said semiconductor element; and
metal plates bonded to said semiconductor element from below and above through said bonding parts, wherein:
said bonding parts comprise:
a mesh metal body disposed between said semiconductor element and said metal plate; and
a bonding member in which said mesh metal body is embedded,

wherein said semiconductor element comprises a plurality of semiconductor elements;
said bonding parts are each provided for bonding of an upper surface and a lower surface of each of said semiconductor elements; and
said metal plates are bonded to said plurality of semiconductor elements from below and above through said bonding parts in common.

2. A semiconductor device, comprising:
a semiconductor element;
bonding parts provided for bonding of an upper surface and a lower surface of said semiconductor element; and
metal plates bonded to said semiconductor element from below and above through said bonding parts, wherein:
said bonding parts comprise:
a mesh metal body disposed between said semiconductor element and said metal plate; and
a bonding member in which said mesh metal body is embedded,

wherein said bonding parts further comprise a columnar metal embedded in said bonding member and having one end bonded to said mesh metal body.

3. The semiconductor device according to claim 2 , wherein said bonding parts further comprise another mesh metal body embedded in said bonding member and bonded to the other end of said columnar metal.

4. A semiconductor device, comprising:
a semiconductor element,
bonding parts provided for bonding of an upper surface and a lower surface of said semiconductor element; and
metal plates bonded to said semiconductor element from below and above through said bonding parts, wherein:
said bonding parts comprise:
a mesh metal body disposed between said semiconductor element and said metal plate; and
a bonding member in which said mesh metal body is embedded,

wherein said mesh metal body has a hollow region in which meshes are absent in plan view
wherein said mesh metal body has said hollow region in said semiconductor element except for a region corresponding to an outer periphery thereof,
wherein said semiconductor element comprises a plurality of semiconductor elements, and said bonding parts are disposed on the lower surfaces of said plurality of semiconductor elements in common, and
wherein said mesh metal body has said hollow region between said plurality of semiconductor elements.

5. The semiconductor device according to claim 1 , wherein a coefficient of linear expansion of said mesh metal body is substantially equal to a coefficient of linear expansion of said semiconductor element.

6. The semiconductor device according to claim 1 , wherein a periphery of said mesh metal body is bent.

7. The semiconductor device according to claim 1 , wherein said mesh metal body further comprises a plate-like metal connected to a periphery thereof.

8. A semiconductor device, comprising:
a semiconductor element;
bonding parts provided for bonding of an upper surface and a lower surface of said semiconductor element; and
metal plates bonded to said semiconductor element from below and above through said bonding parts, wherein:
said bonding parts comprise:
a mesh metal body disposed between said semiconductor element and said metal plate; and
a bonding member in which said mesh metal body is embedded, wherein said mesh metal body comprises metal wires spirally woven in plan view.

9. The semiconductor device according to claim 1 , wherein said mesh metal body has a larger area than that of said semiconductor element in plan view.

10. The semiconductor device according to claim 1 , wherein said mesh metal body is integrated with said metal plates.

11. A semiconductor device, comprising:
a semiconductor element;
a bonding part provided for bonding of a lower surface of said semiconductor element; and
a metal plate bonded to said semiconductor element through said bonding part, wherein:
said bonding part comprises:
a mesh metal body disposed between said semiconductor element and said metal plate; and
a bonding member in which said mesh metal body is embedded; and

said mesh metal body has a larger area than that of said semiconductor element in plan view,
wherein said semiconductor element comprises a plurality of semiconductor elements;
said bonding parts are each provided for bonding of an upper surface and a lower surface of each of said semiconductor elements; and
said metal plates are bonded to said plurality of semiconductor elements from below and above through said bonding parts in common.

12. A semiconductor device, comprising:
a plurality of semiconductor elements;
a bonding part provided for bonding of lower surfaces of said semiconductor elements; and
a metal plate bonded to said semiconductor elements through said bonding part, wherein:
said bonding part comprises:
a mesh metal body disposed between said semiconductor elements and said metal plate; and
a bonding member in which said mesh metal body is embedded; and

said bonding part is disposed on the lower surfaces of said semiconductor elements in common,
wherein said semiconductor element comprises a plurality of semiconductor elements;
said bonding parts are each provided for bonding of an upper surface and a lower surface of each of said semiconductor elements; and
said metal plates are bonded to said plurality of semiconductor elements from below and above through said bonding parts in common.

13. The semiconductor device according to claim 1 , wherein said mesh metal body comprises intersecting first and second metal wires, ones of said first and second metal wires being superimposed in a thickness direction of said mesh metal body.

14. The semiconductor device according to claim 1 , wherein said mesh metal body is compressed in a thickness direction.

15. The semiconductor device according to claim 1 , wherein said bonding member is a conductive adhesive except for solder.

Assignees

• Takayama Tsuyoshi
• Yasuda Yukio
• Kato Hajime
• Hiyama Kazuaki
• Sasaki Taishi
• Ishihara Mikio
• Mitsubishi Electric Corp

Inventors

• Takayama Tsuyoshi
• Yasuda Yukio
• Kato Hajime
• Hiyama Kazuaki
• Sasaki Taishi
• Ishihara Mikio

Classifications

• H10W72/354

  comprising polymers · CPC title

• H10W72/352

  comprising metals or metalloids, e.g. solders · CPC title

• H10W72/321

  Structures or relative sizes of die-attach connectors · CPC title

• H10W72/30

  Die-attach connectors · CPC title

• H10W70/20

  Conductive package substrates serving as an interconnection, e.g. metal plates (leadframes H10W70/40) · CPC title