Semiconductor device
US-2024421048-A1 · Dec 19, 2024 · US
US8933518B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8933518-B2 |
| Application number | US-201313734201-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jan 4, 2013 |
| Priority date | Jan 4, 2013 |
| Publication date | Jan 13, 2015 |
| Grant date | Jan 13, 2015 |
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A stacked power semiconductor device includes vertical metal oxide semiconductor field-effect transistors and dual lead frames packaged with flip-chip technology. In the method of manufacturing the stacked power semiconductor device, a first semiconductor chip is flip chip mounted on the first lead frame. A mounting clips is connected to the electrode at back side of the first semiconductor chip. A second semiconductor chip is mounted on the second lead frame, which is then flipped and stacked on the mounting clip.
Opening claim text (preview).
The invention claimed is: 1. A stacked power semiconductor device with dual lead frame, comprising: a bottom lead frame comprising a first bottom base, a second and a third bottom bases adjacent to the first bottom base and separated from the first bottom base; a mounting clip comprising an extending part bending downward; a top lead frame comprising a first top base and a second top base adjacent to and separated from the first top base; a first semiconductor chip comprisin…
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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Electricity · mapped topic
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