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US8933487B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8933487-B2 |
| Application number | US-201314063207-A |
| Country | US |
| Kind code | B2 |
| Filing date | Oct 25, 2013 |
| Priority date | May 23, 2012 |
| Publication date | Jan 13, 2015 |
| Grant date | Jan 13, 2015 |
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Abstract
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A high electron mobility field effect transistor (HEMT) includes a two dimensional electron gas (2DEG) in the drift region between the gate and the drain that has a non-uniform lateral 2DEG distribution that increases in a direction in the drift region from the gate to the drain.
First claim
Opening claim text (preview).
What is claimed is: 1. A method of fabricating a high electron mobility field effect transistor (HEMT), the method comprising: forming a mask layer on a carrier supply layer, the mask layer configured to be aligned with a drift region from a gate to a drain, and configured to have a lateral variation that increases in a direction from the gate to the drain; and implanting ions through the mask layer into the carrier supply layer. 2. The method claim 1 fur…
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Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
- H10D62/57Primary
Electricity · mapped topic
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Frequently asked questions
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- What does patent US8933487B2 cover?
- A high electron mobility field effect transistor (HEMT) includes a two dimensional electron gas (2DEG) in the drift region between the gate and the drain that has a non-uniform lateral 2DEG distribution that increases in a direction in the drift region from the gate to the drain.
- Who is the assignee on this patent?
- Hrl Lab Llc, Hrl Lab Llc
- What technology area does this patent fall under?
- Primary CPC classification H10D62/57. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Jan 13 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).