Light emitting device having protrusions from a conductive support member light emitting device package, and lighting system

Patent metadata

Field	Value
Publication number	US-8933477-B2
Application number	US-201313874348-A
Country	US
Kind code	B2
Filing date	Apr 30, 2013
Priority date	Feb 18, 2010
Publication date	Jan 13, 2015
Grant date	Jan 13, 2015

Abstract

Disclosed is a light emitting device. The light emitting device includes a light emitting structure layer including a first semiconductor layer, an active layer, and a second semiconductor layer, an electrode electrically connected to the first semiconductor layer, an electrode layer under the light emitting structure layer, and a conductive support member under the electrode layer. A channel layer is between the second semiconductor layer and the electrode layer. A protrusion projected from at least one of edges of the conductive support member includes and having a rough surface.

First claim

What is claimed is:

1. A light emitting device comprising:
a light emitting structure layer including a first semiconductor layer, a second semiconductor layer under the first semiconductor layer and an active layer between the first and second semiconductor layers;
an electrode electrically connected to the first semiconductor layer;
an electrode layer under the light emitting structure layer;
a conductive support member under the electrode layer;
a first protrusion protruded from at least one edge of the conductive support member; and
a channel layer disposed between a top surface of the conductive support member and a lower surface of the second semiconductor layer,
wherein the channel layer includes an opening region under the lower surface of the second semiconductor layer and an outer portion extended outward beyond the lower surface of the second semiconductor layer,
wherein the outer portion of the channel layer is located at a lower position than the lower surface of the second semiconductor layer,
wherein the first protrusion includes at least one material constituting the electrode layer and the conductive support member,
wherein the first protrusion has an outer side having a rough surface and an inner side contacted with the channel layer, the outer side opposite to the inner side, and
wherein the first protrusion is located at an outer position than a lateral sidewall of the second semiconductor layer and is located at a lower position than a top surface of the light emitting structure layer.

2. The light emitting device of claim 1 , wherein the first protrusion projects from at least one edge of the conductive support member in a vertical direction with respect to a lower surface of the light emitting structure layer.

3. The light emitting device of claim 1 , further comprising a second protrusion projected beyond a bottom surface of the conductive support member from at least one lower edge of the conductive support member.

4. The light emitting device of claim 3 , wherein the first and second protrusions are protruded in a direction opposite to each other from at least one lateral sidewall of the conductive support member.

5. The light emitting device of claim 3 , wherein a portion of the second protrusion is located at a lower position than the bottom surface of the conductive support member and a portion of the first protrusion is located at a higher position than the top surface of the conductive support member.

6. The light emitting device of claim 1 , wherein the first protrusion is formed in a plurality, wherein the plurality of first protrusions is spaced apart from each other.

7. The light emitting device of claim 1 , wherein the first protrusion is formed of metal or at least two alloys.

8. The light emitting device of claim 1 , wherein the first protrusion has a length of 10 μm or less from the at least one of edges of the conductive support member.

9. The light emitting device of claim 1 , wherein the first protrusion corresponds to a lateral sidewall of the light emitting structure layer.

10. The light emitting device of claim 1 , wherein the electrode layer is disposed in the opening region of the channel layer.

11. The light emitting device of claim 1 , wherein the channel layer includes a transparent material.

12. The light emitting device of claim 1 , wherein the first protrusion is located at an outer position than the channel layer and the inner side of the first protrusion has a rough surface.

13. A light emitting device comprising:
a light emitting structure layer including a first semiconductor layer, a second semiconductor layer under the first semiconductor layer and an active layer between the first and second semiconductor layers;
an electrode electrically connected to the first semiconductor layer;
an electrode layer under the light emitting structure layer; and
a conductive support member under a lower surface of the second semiconductor layer,
wherein the conductive support member includes a first protrusion protruded from at least one edge of a top surface of the conductive support member and a recess region recessed inward from at least one outer lateral sidewall of the conductive support member,
wherein the first protrusion includes at least one material constituting the electrode layer and the conductive support member,
wherein the first protrusion has a rough surface and is located at an outer position than a lateral sidewall of the second semiconductor layer, and
wherein the recess region is located at a lower position than a bottom surface of the electrode layer and is connected to the at least one outer lateral sidewall of the conductive support member.

14. The light emitting device of claim 13 , wherein the first protrusion is formed in a plurality, and
wherein the plurality of first protrusions is projected from different edges of the conductive support member.

15. The light emitting device of claim 14 , further comprising a second protrusion projected from at least one edge of a bottom surface of the conductive support member.

16. The light emitting device of claim 15 , wherein the first and second protrusions are protruded in a direction opposite to each other with respect to the at least one outer lateral sidewall of the conductive support member, and
wherein a top portion of the second protrusion is located at a lower position than a lower surface of the conductive support member.

17. The light emitting device of claim 15 , wherein the plurality of first protrusions is spaced apart from each other.

18. The light emitting device of claim 13 , wherein the first protrusion corresponds to a lateral sidewall of the active layer.

19. The light emitting device of claim 13 , wherein the first protrusion is located at an outer region than a vertically overlapping region with respect to the lower surface of the second semiconductor layer.

20. The light emitting device of claim 13 , wherein the first protrusion is located at a higher position than the lower surface of the second semiconductor layer.

Assignees

• Lg Innotek Co Ltd

Inventors

• Jeong Joo Young
• Jeong Young Kyu

Classifications

• H10W90/756

  between a chip and a stacked lead frame, conducting package substrate or heat sink · CPC title

• H10W74/00

  Encapsulations, e.g. protective coatings · CPC title

• H10H20/018

  Bonding of wafers · CPC title

• H10H20/857

  Interconnections, e.g. lead-frames, bond wires or solder balls · CPC title

• H10H20/833

  Transparent materials · CPC title