Semiconductor element

Patent metadata

Field	Value
Publication number	US-8933466-B2
Application number	US-201214349024-A
Country	US
Kind code	B2
Filing date	Nov 1, 2012
Priority date	Mar 23, 2012
Publication date	Jan 13, 2015
Grant date	Jan 13, 2015

Abstract

In a semiconductor element, a body region of a second conductivity type includes a first body region in contact with a surface of a first silicon carbide semiconductor layer, and a second body region in contact with a bottom surface of the body region of the second conductivity type. The impurity concentration of the first body region is twice or more the impurity concentration of the second body region. A second silicon carbide semiconductor layer of a first conductivity type, which is a channel layer, has an impurity concentration distribution in a direction perpendicular to a semiconductor substrate, and an impurity concentration on a side in contact with the gate insulating film is lower than an impurity concentration on a side in contact with the first body region.

First claim

The invention claimed is:

1. A semiconductor element, comprising:
a semiconductor substrate of a first conductivity type;
a first silicon carbide semiconductor layer of the first conductivity type located on a principal surface of the semiconductor substrate;
a body region of a second conductivity type located in the first silicon carbide semiconductor layer;
an impurity region of the first conductivity type located in the body region;
a second silicon carbide semiconducto…

Assignees

• Panasonic Corp

Inventors

• Uchida Masao
• Horikawa Nobuyuki
• Tanaka Koutarou
• Kiyosawa Tsutomu

Classifications

• H10D30/662

  Electricity · mapped topic

• H10D64/256

  Electricity · mapped topic

• H10D84/811

  Electricity · mapped topic

• H10D62/8325

  Electricity · mapped topic

• H10D62/314

  Electricity · mapped topic