Semiconductor device

Patent metadata

Field	Value
Publication number	US-8933465-B2
Application number	US-201414205854-A
Country	US
Kind code	B2
Filing date	Mar 12, 2014
Priority date	Mar 22, 2013
Publication date	Jan 13, 2015
Grant date	Jan 13, 2015

Abstract

A semiconductor device of an embodiment includes an n-type SiC substrate, an n-type SiC layer formed on the SiC substrate; a p-type first SiC region formed in the surface of the SiC layer and contains a p-type impurity and an n-type impurity, the p-type impurity being an element A, the n-type impurity being an element D, the element A and the element D being a combination of Al, Ga, or In and N, and/or a combination of B and P, the ratio of the concentration of the element D to the concentration of the element A in the combination(s) being higher than 0.33 but lower than 0.995, the concentration of the element A forming part of the combination(s) being not lower than 1×10 17 cm −3 and not higher than 1×10 22 cm −3 , a first electrode, and a second electrode.

First claim

What is claimed is:

1. A semiconductor device comprising:
an n-type SiC substrate having first face and second face;
an n-type SiC layer formed on a first face side of the SiC substrate;
a p-type first SiC region formed in a surface of the SiC layer, the first SiC region containing a p-type impurity and an n-type impurity, the p-type impurity being an element A and the n-type impurity being an element D, the element A and the element D forming at least a first combination or a…

Assignees

• Toshiba Kk

Inventors

• Ota Chiharu
• Shimizu Tatsuo
• Nishio Johji
• Shinohe Takashi

Classifications

• H10D8/051

  Electricity · mapped topic

• H10D62/106

  Electricity · mapped topic

• H10D64/64

  Electricity · mapped topic

• H10D64/62

  Electricity · mapped topic

• H10D62/834

  Electricity · mapped topic