Apparatus having a dielectric containing scandium and gadolinium

Patent metadata

Field	Value
Publication number	US-8933449-B2
Application number	US-201314099107-A
Country	US
Kind code	B2
Filing date	Dec 6, 2013
Priority date	Aug 30, 2005
Publication date	Jan 13, 2015
Grant date	Jan 13, 2015

Abstract

Apparatus having a dielectric containing scandium and gadolinium can provide a reliable structure with a high dielectric constant (high k). In an embodiment, a monolayer or partial monolayer sequence process, such as for example atomic layer deposition (ALD), can be used to form a dielectric containing gadolinium oxide and scandium oxide. In an embodiment, a dielectric structure can be formed by depositing gadolinium oxide by atomic layer deposition onto a substrate surface using precursor chemicals, followed by depositing scandium oxide onto the substrate using precursor chemicals, and repeating to form a thin laminate structure. A dielectric containing scandium and gadolinium may be used as gate insulator of a MOSFET, a capacitor dielectric in a DRAM, as tunnel gate insulators in flash memories, as a NROM dielectric, or as a dielectric in other electronic devices, because the high dielectric constant (high k) of the film provides the functionality of a much thinner silicon dioxide film.

First claim

What is claimed is:

1. A memory device comprising:
a substrate comprising a plurality of diffusions;
a dielectric layer formed on the substrate between the plurality of diffusions, the dielectric layer comprising Gd X Sc Y O 3 formed as interleaved layers of scandium oxide and gadolinium oxide wherein a ratio of thicknesses of the interleaved layers is not equal; and
a gate electrode formed on the dielectric layer.

2. The memory device of claim 1 where…

Assignees

• Micron Technology Inc

Inventors

• Ahn Kie Y
• Forbes Leonard

Classifications

• H10P14/69397

  Electricity · mapped topic

• H10P14/6339

  Electricity · mapped topic

• H10P14/662

  Electricity · mapped topic

• H10D64/01342

  Electricity · mapped topic

• H10P14/69396 Primary

  Electricity · mapped topic