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US8933434B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8933434-B2 |
| Application number | US-201313897508-A |
| Country | US |
| Kind code | B2 |
| Filing date | May 20, 2013 |
| Priority date | May 20, 2013 |
| Publication date | Jan 13, 2015 |
| Grant date | Jan 13, 2015 |
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Abstract
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A vertical stack including a p-doped GaN portion, a multi-quantum-well, and an n-doped GaN portion is formed on an insulator substrate. The p-doped GaN portion may be formed above, or below, the multi-quantum-well. A dielectric material liner is formed around the vertical stack, and is patterned to physically expose a top surface of the p-doped GaN portion. A selective low temperature epitaxy process is employed to deposit a semiconductor material including at least one elemental semiconductor material on the physically exposed surfaces of the p-doped GaN portion, thereby forming an elemental semiconductor material portion. Metallization is performed on a portion of the elemental semiconductor material portions to form an electrical contact structure that provides effective electrical contact to the p-doped GaN portion through the elemental semiconductor material portion. The elemental semiconductor material portion spreads electrical current between the electrical contact structure and the p-doped GaN portion.
First claim
Opening claim text (preview).
What is claimed is: 1. A semiconductor structure comprising: a vertical stack located on a substrate, said vertical stack comprising, from bottom to top: a first GaN portion having a doping of a first conductivity type, a multi-quantum well located on said first GaN portion, and a second GaN portion located on said multi-quantum well and having a doping of a second conductivity type that is the opposite of said first conductivity type, wherein one of said first…
Assignees
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Classifications
Electricity · mapped topic
Electricity · mapped topic
- H10H20/825Primary
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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- What does patent US8933434B2 cover?
- A vertical stack including a p-doped GaN portion, a multi-quantum-well, and an n-doped GaN portion is formed on an insulator substrate. The p-doped GaN portion may be formed above, or below, the multi-quantum-well. A dielectric material liner is formed around the vertical stack, and is patterned to physically expose a top surface of the p-doped GaN portion. A selective low temperature epitaxy p…
- Who is the assignee on this patent?
- IBM, Internat Business Machines Company
- What technology area does this patent fall under?
- Primary CPC classification H10H20/825. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Jan 13 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).