Injector for semiconductor epitaxy growth
US-2016362813-A1 · Dec 15, 2016 · US
Colloidal nanocrystal ensembles with narrow linewidth band gap photoluminescence and methods of synthesizing colloidal semiconductor nanocrystals
US8932489B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8932489-B2 |
| Application number | US-200913058239-A |
| Country | US |
| Kind code | B2 |
| Filing date | Aug 11, 2009 |
| Priority date | Aug 12, 2008 |
| Publication date | Jan 13, 2015 |
| Grant date | Jan 13, 2015 |
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Abstract
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A method of synthesizing colloidal semiconductor nanocrystals involves contacting a source of at least one semi-conductor cation element (Group 11-14, more preferably Group 12-14, more preferably 12 or 14, more preferably Cd, Zn, Hg or Pb, most preferably Cd) with a source of at least one Group 15, or 16 element in the presence of a ligand forming compound containing a carboxylic acid moiety in a reaction medium comprising a solvent that is substantially noncoordinating with respect to the at least one cation, the ligand forming compound and the source of at least one cation element having a molar ratio of 1:1 or less. The cation element source is preferably bonded to two low carbon acids. Some of the low carbon acids are substituted with the ligand forming compound to produce a cation precursor that is more soluble in the noncoordinating solvent. The method produces novel ensembles of colloidal semiconductor nanocrystals that have narrow linewidth absorption and bandgap photoluminescence spectra indicating that the colloidal semiconductor nanocrystals are of substantially a single size. The single size families are produced for CdSe, CdTe, CdS, CdSeTe, and CdP.
First claim
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The invention claimed is: 1. An ensemble of bandqap photoluminescent colloidal semiconductor nanocrystals having at least one absorption and bandgap photoemission linewidth of 10±3 nm, wherein the semiconductor is CdSe, and the bandgap photoluminescence absorption peak is near one of: 465 nm, 513 nm, and 551 nm, or the bandgap photoluminescence absorption peak is near 395 nm, with a photoemission peak redshifted 0-2 nm with respect to the absorption peak. 2. An…
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- C30B29/48Primary
Chemistry & Metallurgy · mapped topic
- C09K11/883Primary
Chemistry & Metallurgy · mapped topic
Chemistry & Metallurgy · mapped topic
Chemistry & Metallurgy · mapped topic
- B82Y30/00Primary
Operations & Transport · mapped topic
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- What does patent US8932489B2 cover?
- A method of synthesizing colloidal semiconductor nanocrystals involves contacting a source of at least one semi-conductor cation element (Group 11-14, more preferably Group 12-14, more preferably 12 or 14, more preferably Cd, Zn, Hg or Pb, most preferably Cd) with a source of at least one Group 15, or 16 element in the presence of a ligand forming compound containing a carboxylic acid moiety in…
- Who is the assignee on this patent?
- Yu Kui, Ouyang Jianying, Nat Res Council Canada
- What technology area does this patent fall under?
- Primary CPC classification C30B29/48. Mapped technology areas include Chemistry & Metallurgy.
- When was this patent published?
- Publication date Tue Jan 13 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).