Methods of forming semiconductor devices
US-2024387699-A1 · Nov 21, 2024 · US
Polishing liquid and polishing method
US8932479B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8932479-B2 |
| Application number | US-201113071539-A |
| Country | US |
| Kind code | B2 |
| Filing date | Mar 25, 2011 |
| Priority date | Mar 31, 2010 |
| Publication date | Jan 13, 2015 |
| Grant date | Jan 13, 2015 |
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Abstract
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Provided is a polishing liquid which is used for chemical mechanical polishing of a body to be polished having a layer containing polysilicon or a modified polysilicon, and using which the polishing rate of a layer containing a silicon-based material other than polysilicon is high and polishing of the layer containing polysilicon can be selectively suppressed. The polishing liquid includes components (A), (B), and (C), has a pH of from 1.5 to 7.0, and is capable of selectively polishing a second layer with respect to a first layer: (A) colloidal silica particles having a negative ζ potential; (B) phosphoric acid or an organic phosphonic acid compound represented by the following Formula (1) or (2); and (C) an anionic surfactant having at least one group represented by the following Formulae (I) to (IV): R 2 —C(R 3 ) 3-a —(PO 3 H 2 ) a Formula (1): R 4 —N(R 5 ) m —(CH 2 —PO 3 H 2 ) n Formula (2): —PO 3 X 2 Formula (I): —OPO 3 X 2 Formula (II): —COOX Formula (III): —SO 3 X Formula (IV).
First claim
Opening claim text (preview).
What is claimed is: 1. A polishing liquid which is used for chemical mechanical polishing of a body to be polished in a planarization process for fabrication of a semiconductor integrated circuit, in which the body to be polished comprises at least a first layer comprising polysilicon or a polysilicon doped with an impurity element of P or B, and a second layer comprising at least one selected from the group consisting of silicon oxide, silicon nitride, silicon carbide, silicon car…
Assignees
Inventors
Classifications
- H10P95/062Primary
Electricity · mapped topic
Chemistry & Metallurgy · mapped topic
Chemistry & Metallurgy · mapped topic
- H01L21/31053Primary
Electricity · mapped topic
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- What does patent US8932479B2 cover?
- Provided is a polishing liquid which is used for chemical mechanical polishing of a body to be polished having a layer containing polysilicon or a modified polysilicon, and using which the polishing rate of a layer containing a silicon-based material other than polysilicon is high and polishing of the layer containing polysilicon can be selectively suppressed. The polishing liquid includes comp…
- Who is the assignee on this patent?
- Kamimura Tetsuya, Fujifilm Corp
- What technology area does this patent fall under?
- Primary CPC classification H10P95/062. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Jan 13 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).