Mram device with octagon profile
US-2024135978-A1 · Apr 25, 2024 · US
Tunnel barrier sensor with multilayer structure
US8929035B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8929035-B2 |
| Application number | US-46846709-A |
| Country | US |
| Kind code | B2 |
| Filing date | May 19, 2009 |
| Priority date | Mar 28, 2002 |
| Publication date | Jan 6, 2015 |
| Grant date | Jan 6, 2015 |
How to read this patent
A practical reading order for non-experts. Skip the full description unless you need deep technical detail.
- Title
What the patent document calls the invention.
- Abstract
A short plain-language summary of the technical disclosure.
- Assignees and inventors
Who owns or filed the patent and who is credited as inventor.
- Key dates
Filing, priority, publication, and grant dates set the timeline.
- First independent claim
The legal scope of protection — read this for what is actually claimed.
- CPC / IPC classifications
Technology tags used to group this patent with similar filings.
- Citations and related patents
Prior art links and similar publications in this corpus.
Abstract
Official abstract text for this publication.
A magnetoresistance effect element having a magnetoresistance effect film and a pair of electrode, the magnetoresistance effect film having a first magnetic layer whose direction of magnetization is substantially pinned in one direction, a second magnetization layer whose direction of magnetization changes in response to an external magnetic field, a nonmagnetic intermediate layer located between the first and second magnetic layers, and a film provided in the first magnetic layer, in the second magnetic layer, at an interface between the first magnetic layer and the nonmagnetic intermediate layer, and/or at an interface between the second magnetic layer and the nonmagnetic intermediate layer.
First claim
Opening claim text (preview).
What we claim is: 1. A magnetoresistance effect element comprising: a magnetoresistance effect film and a pair of electrodes electrically coupled to the magnetoresistance effect film; wherein the magnetoresistance effect film comprises: a first magnetic layer; a second magnetic layer; a nonmagnetic intermediate layer located between the first and second magnetic layers; and a film provided between the first magnetic layer and the nonmagnetic intermediate layer, the fil…
Assignees
Inventors
Classifications
Patent family
Related publications grouped by family.
External sources
Next steps
Free tools are coming soon. Tell us what you want to track and we'll notify you.
Frequently asked questions
Answers are generated from the same data shown on this page.
- What does patent US8929035B2 cover?
- A magnetoresistance effect element having a magnetoresistance effect film and a pair of electrode, the magnetoresistance effect film having a first magnetic layer whose direction of magnetization is substantially pinned in one direction, a second magnetization layer whose direction of magnetization changes in response to an external magnetic field, a nonmagnetic intermediate layer located betwe…
- Who is the assignee on this patent?
- Fukuzawa Hideaki, Yuasa Hiromi, Fuke Hiromi, and 3 more
- What technology area does this patent fall under?
- Primary CPC classification H01L43/08. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Jan 06 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).