Driver of promoting pixel charging ability of thin film transistor and method thereof

US8928569B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-8928569-B2
Application numberUS-201113376606-A
CountryUS
Kind codeB2
Filing dateAug 12, 2011
Priority dateAug 5, 2011
Publication dateJan 6, 2015
Grant dateJan 6, 2015

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  2. Abstract

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  5. First independent claim

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Abstract

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Disclosed is related with a LCD technology, and particularly to a driver of promoting pixel charging ability of a thin film transistor and a method thereof. The driver of promoting pixel charging ability of a thin film transistor comprises a thin film transistor, a first capacitor and a second capacitor. The source of the thin film transistor is coupled to the first capacitor and the second capacitor respectively. As the drain voltage switches from positive polarity to negative polarity or from negative polarity to positive polarity, a voltage different between a source voltage stored by the thin film transistor and the first capacitor voltage is higher than a predetermined value. The present invention is capable of promoting the charge current and the pixel charging ability. Meanwhile, the requirement of the metal line width can be diminished to improve aperture ratio and raise transmittance of product.

First claim

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What is claimed is: 1. A driver of promoting pixel charging ability of a thin film transistor, characterized in comprising a thin film transistor, a first capacitor and a second capacitor, and a source of the thin film transistor is coupled to the first capacitor and the second capacitor respectively, and a drain of the thin film transistor is coupled to a drain voltage, and a gate of the thin film transistor is coupled to a gate voltage, and the other end of the first capacitor is…

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What does patent US8928569B2 cover?
Disclosed is related with a LCD technology, and particularly to a driver of promoting pixel charging ability of a thin film transistor and a method thereof. The driver of promoting pixel charging ability of a thin film transistor comprises a thin film transistor, a first capacitor and a second capacitor. The source of the thin film transistor is coupled to the first capacitor and the second cap…
Who is the assignee on this patent?
Kang Chihtsung, Shenzhen China Star Optoelect
What technology area does this patent fall under?
Primary CPC classification G09G3/3648. Mapped technology areas include Physics.
When was this patent published?
Publication date Tue Jan 06 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).