High voltage resistor with high voltage junction termination
US-2024014260-A1 · Jan 11, 2024 · US
Semiconductor device and voltage divider
US8928397B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8928397-B2 |
| Application number | US-201213564357-A |
| Country | US |
| Kind code | B2 |
| Filing date | Aug 1, 2012 |
| Priority date | Aug 8, 2011 |
| Publication date | Jan 6, 2015 |
| Grant date | Jan 6, 2015 |
How to read this patent
A practical reading order for non-experts. Skip the full description unless you need deep technical detail.
- Title
What the patent document calls the invention.
- Abstract
A short plain-language summary of the technical disclosure.
- Assignees and inventors
Who owns or filed the patent and who is credited as inventor.
- Key dates
Filing, priority, publication, and grant dates set the timeline.
- First independent claim
The legal scope of protection — read this for what is actually claimed.
- CPC / IPC classifications
Technology tags used to group this patent with similar filings.
- Citations and related patents
Prior art links and similar publications in this corpus.
Abstract
Official abstract text for this publication.
A semiconductor device includes first and second resistors. The first resistor is formed in a first substrate region and coupled between a first node and an output node. The second resistor is formed in a second substrate region and coupled between the output node and a second node. The first substrate region is coupled to the first node which has a first voltage. The second node has a second voltage. The second substrate region is coupled to a voltage dividing node that is set in the first resistor.
First claim
Opening claim text (preview).
What is claimed is: 1. A semiconductor device comprising: a first resistor formed in a first substrate region and coupled between a first node and an output node; a second resistor formed in a second substrate region and coupled between a second node and the output node, wherein the first substrate region receives a first voltage via the first node, the second resistor receives a second voltage via the second node, and the second substrate region is connected to the first r…
Assignees
Inventors
Classifications
- H10D84/209Primary
Electricity · mapped topic
Patent family
Related publications grouped by family.
External sources
Next steps
Free tools are coming soon. Tell us what you want to track and we'll notify you.
Frequently asked questions
Answers are generated from the same data shown on this page.
- What does patent US8928397B2 cover?
- A semiconductor device includes first and second resistors. The first resistor is formed in a first substrate region and coupled between a first node and an output node. The second resistor is formed in a second substrate region and coupled between the output node and a second node. The first substrate region is coupled to the first node which has a first voltage. The second node has a second v…
- Who is the assignee on this patent?
- Kodera Kazushi, Kato Yoshiharu, Spansion Llc
- What technology area does this patent fall under?
- Primary CPC classification H10D84/209. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Jan 06 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).