Semiconductor device and electronic apparatus using the same

Patent metadata

Field	Value
Publication number	US-8928362-B2
Application number	US-201414176676-A
Country	US
Kind code	B2
Filing date	Feb 10, 2014
Priority date	Jan 17, 2002
Publication date	Jan 6, 2015
Grant date	Jan 6, 2015

Abstract

The transistor suffers the variation caused in threshold voltage or mobility due to gathering of the factors of the variation in gate insulator film resulting from a difference in manufacture process or substrate used and of the variation in channel-region crystal state. The present invention provides an electric circuit having an arrangement such that both electrodes of a capacitance element can hold a gate-to-source voltage of a particular transistor. The invention provides an electric circuit having a function capable of setting a potential difference at between the both electrodes of the capacitance element by the use of a constant-current source.

First claim

What is claimed is:

1. A semiconductor device comprising:
a first transistor;
a second transistor;
a first capacitor;
a second capacitor;
a third capacitor;
a first switch;
a second switch;
a third switch;
a fourth switch;
a fifth switch;
a sixth switch;
a seventh switch;
an eighth switch; and
a ninth switch,
wherein the first transistor and the second transistor have the same polarity,
wherein a gate of the first transistor is electrically connected…

Assignees

• Semiconductor Energy Lab

Inventors

• Kimura Hajime
• Watanabe Yasuko

Classifications

• H03F3/082

  Electricity · mapped topic

• H03F3/45183

  Electricity · mapped topic

• G11C27/028 Primary

  Physics · mapped topic

• H03K19/00384

  Electricity · mapped topic

• H03F3/45179 Primary

  Electricity · mapped topic