Semiconductor device and method for preparing semiconductor device
US-2024339405-A1 · Oct 10, 2024 · US
Semiconductor device including contact plug and method of manufacturing the same
US8928152B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8928152-B2 |
| Application number | US-201414186025-A |
| Country | US |
| Kind code | B2 |
| Filing date | Feb 21, 2014 |
| Priority date | Feb 17, 2010 |
| Publication date | Jan 6, 2015 |
| Grant date | Jan 6, 2015 |
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- Title
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Abstract
Official abstract text for this publication.
A semiconductor device includes a substrate having a conductive area, a first pattern formed on the substrate and having a contact hole through which the conductive area is exposed, and a contact plug in the contact hole. The contact plug includes first and second silicon layers. The first silicon layer, formed from a first compound including at least two silicon atoms, is formed in the contact hole to contact a top surface of the conductive area and a side wall of the first pattern. The second silicon layer, formed from a second compound including a number of silicon atoms less than the number of the silicon atoms of the first compound, is formed on the first silicon layer and fills a remaining space of the contact hole, the second silicon layer being spaced apart from the first pattern at an entrance of the contact hole.
First claim
Opening claim text (preview).
What is claimed is: 1. A semiconductor device comprising: a substrate comprising a conductive area; a first pattern formed on the substrate and having a contact hole through which the conductive area is exposed, wherein the first pattern comprises a layer of electrically insulating material disposed on the substrate, and a lower conductive layer of polysilicon disposed directly on the layer of insulating material; and a contact plug in the contact hole, wherein the contact plu…
Assignees
Inventors
Classifications
- H10D64/0113Primary
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
- H10W20/42Primary
Electricity · mapped topic
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Frequently asked questions
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- What does patent US8928152B2 cover?
- A semiconductor device includes a substrate having a conductive area, a first pattern formed on the substrate and having a contact hole through which the conductive area is exposed, and a contact plug in the contact hole. The contact plug includes first and second silicon layers. The first silicon layer, formed from a first compound including at least two silicon atoms, is formed in the contact…
- Who is the assignee on this patent?
- Samsung Electronics Co Ltd
- What technology area does this patent fall under?
- Primary CPC classification H10D64/0113. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Jan 06 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).