Semiconductor device and method of manufacturing the same

Patent metadata

Field	Value
Publication number	US-8928147-B2
Application number	US-201414338175-A
Country	US
Kind code	B2
Filing date	Jul 22, 2014
Priority date	Apr 19, 2005
Publication date	Jan 6, 2015
Grant date	Jan 6, 2015

Abstract

Even when a stiffener is omitted, the semiconductor device which can prevent the generation of twist and distortion of a wiring substrate is obtained. As for a semiconductor device which has a wiring substract, a semiconductor chip by which the flip chip was made to the wiring substrate, and a heat spreader adhered to the back surface of the semiconductor chip, and which omitted the stiffener for reinforcing a wiring substrate and maintaining the surface smoothness of a heat spreader, a wiring substrate has a plurality of insulating substrates in which a through hole whose diameter differs, respectively was formed, and each insulating substrate contains a glass cloth.

First claim

What is claimed is:

1. A semiconductor device comprising:
a wiring substrate having a core substrate, a first build-up substrate which is formed over a first main surface of the core substrate, and a second build-up substrate which is formed over a second main surface opposite the first main surface of the core substate;
a semiconductor chip having an obverse surface and a reverse surface opposite the obverse surface, the semiconductor chip being mounted over the first build-up…

Assignees

• Renesas Electronics Corp

Inventors

• Hayashi Eiji
• Go Kyo
• Harada Kozo
• Baba Shinji

Classifications

• H05K2201/029

  Electricity · mapped topic

• H05K1/0366

  Electricity · mapped topic

• H05K3/4602

  Electricity · mapped topic

• H10P72/74 Primary

  Electricity · mapped topic

• H10W90/734

  Electricity · mapped topic