Package substrate and semiconductor package including the same
US-2024429153-A1 · Dec 26, 2024 · US
Apparatus related to capacitance reduction of a signal port
US8928142B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8928142-B2 |
| Application number | US-201313774135-A |
| Country | US |
| Kind code | B2 |
| Filing date | Feb 22, 2013 |
| Priority date | Feb 22, 2013 |
| Publication date | Jan 6, 2015 |
| Grant date | Jan 6, 2015 |
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- Title
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Abstract
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In one general aspect, an apparatus includes a first capacitor defined by a dielectric disposed between a bump metal and a region of a first conductivity type, and a second capacitor in series with the first capacitor and defined by a PN junction including the region of the first conductivity type and a region of a second conductivity type. The region of the first conductivity type can be configured to be coupled to a first node having a first voltage, and the region of the second conductivity type can be configured to be coupled to a second node having a second voltage different than the first voltage.
First claim
Opening claim text (preview).
What is claimed is: 1. An apparatus, comprising: a first capacitor defined by a dielectric disposed between a bump metal and a region of a first conductivity type; and a second capacitor in series with the first capacitor and defined by a PN junction including the region of the first conductivity type and a region of a second conductivity type, the region of the first conductivity type configured to be coupled to a first node having a first voltage, the region of the second co…
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Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
- H10W90/701Primary
Electricity · mapped topic
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- What does patent US8928142B2 cover?
- In one general aspect, an apparatus includes a first capacitor defined by a dielectric disposed between a bump metal and a region of a first conductivity type, and a second capacitor in series with the first capacitor and defined by a PN junction including the region of the first conductivity type and a region of a second conductivity type. The region of the first conductivity type can be confi…
- Who is the assignee on this patent?
- Fairchild Semiconductor
- What technology area does this patent fall under?
- Primary CPC classification H10W90/701. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Jan 06 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).