Semiconductor device and method
US-2024395867-A1 · Nov 28, 2024 · US
Epitaxial layer
US8928126B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8928126-B2 |
| Application number | US-201213670476-A |
| Country | US |
| Kind code | B2 |
| Filing date | Nov 7, 2012 |
| Priority date | Nov 7, 2012 |
| Publication date | Jan 6, 2015 |
| Grant date | Jan 6, 2015 |
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Abstract
Official abstract text for this publication.
A method of forming an epitaxial layer includes the following steps. At first, a first epitaxial growth process is performed to form a first epitaxial layer on a substrate, and a gas source of silicon, a gas source of carbon, a gas source of phosphorous and a gas source of germanium are introduced during the first epitaxial growth process to form the first epitaxial layer including silicon, carbon, phosphorous and germanium. Subsequently, a second epitaxial growth process is performed to form a second epitaxial layer, and a number of elements in the second epitaxial layer is smaller than a number of elements in the first epitaxial layer.
First claim
Opening claim text (preview).
What is claimed is: 1. An epitaxial layer, comprising: a first epitaxial layer, wherein the first epitaxial layer comprises silicon, carbon, phosphorous and germanium; a second epitaxial layer disposed on the first epitaxial layer, wherein a number of elements in the second epitaxial layer is smaller than a number of elements in the first epitaxial layer; a third epitaxial layer disposed under the second epitaxial layer, wherein the third epitaxial layer has a doped concentrat…
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Classifications
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
- H10P14/24Primary
Electricity · mapped topic
Electricity · mapped topic
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Frequently asked questions
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- What does patent US8928126B2 cover?
- A method of forming an epitaxial layer includes the following steps. At first, a first epitaxial growth process is performed to form a first epitaxial layer on a substrate, and a gas source of silicon, a gas source of carbon, a gas source of phosphorous and a gas source of germanium are introduced during the first epitaxial growth process to form the first epitaxial layer including silicon, car…
- Who is the assignee on this patent?
- United Microelectronics Corp
- What technology area does this patent fall under?
- Primary CPC classification H10P14/24. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Jan 06 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).