Solid-state imaging element, method of manufacturing the same, solid-state imaging apparatus, and imaging apparatus

Patent metadata

Field	Value
Publication number	US-8928103-B2
Application number	US-201313888926-A
Country	US
Kind code	B2
Filing date	May 7, 2013
Priority date	Aug 31, 2010
Publication date	Jan 6, 2015
Grant date	Jan 6, 2015

Abstract

A solid-state imaging element including a semiconductor substrate that has a light reception portion performing a photoelectric conversion of an incident light; an oxide layer that is formed on a surface of the semiconductor substrate; a light shielding layer that is formed on an upper layer further than the oxide layer via an adhesion layer; and an oxygen supply layer that is disposed between the oxide layer and the adhesion layer and is formed of a material which shows an oxidation enthalpy smaller than that of a material forming the oxide layer.

First claim

What is claimed is:

1. A solid-state imaging element comprising:
a semiconductor substrate including a light reception portion configured to perform a photoelectric conversion of incident light;
a first oxide layer formed on a surface of the semiconductor substrate; and
a second oxide layer between the first oxide layer and a planarization film, wherein the second oxide layer is formed of a material having an oxidation enthalpy that is smaller than that of a material forming t…

Assignees

• Sony Corp

Inventors

• Ohba Yoshiyuki
• Hiyama Susumu
• Oshiyama Itaru

Classifications

• H10F39/811

  Electricity · mapped topic

• H10F39/18

  Electricity · mapped topic

• H10F39/8063

  Electricity · mapped topic

• H10F39/802

  Electricity · mapped topic

• H10F39/8057 Primary

  Electricity · mapped topic