Power mosfet and manufacturing method thereof
US-2024322032-A1 · Sep 26, 2024 · US
Semiconductor device
US8928087B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8928087-B2 |
| Application number | US-201213687349-A |
| Country | US |
| Kind code | B2 |
| Filing date | Nov 28, 2012 |
| Priority date | Nov 29, 2011 |
| Publication date | Jan 6, 2015 |
| Grant date | Jan 6, 2015 |
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- Title
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- Abstract
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Abstract
Official abstract text for this publication.
A semiconductor device is equipped with an element region, an electrode, a thermal conduction portion, and a protective membrane. The element region is equipped with a plurality of gate electrodes. The electrode is formed on a surface of the element region. The thermal conduction portion is located on a surface side of a central portion of the electrode, and is higher in thermal conductivity than the element region. The protective membrane is formed on a peripheral portion that is located on the surface side of the electrode and surrounds a periphery of the central portion. In the element region, an emitter central region that is formed on a back side of the central portion of the electrode remains on for a longer time than an emitter peripheral region that is formed on a back side of the peripheral portion of the electrode.
First claim
Opening claim text (preview).
What is claimed is: 1. A semiconductor device comprising: a semiconductor element region having a plurality of first insulated gates and a plurality of second insulated gates; an electrode that is formed on a surface of the semiconductor element region; a thermal conduction member that is located on a surface side of a central portion of the electrode; a central region formed on a back side of the central portion of the electrode, the plurality of first insulated gates forme…
Assignees
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Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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Frequently asked questions
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- What does patent US8928087B2 cover?
- A semiconductor device is equipped with an element region, an electrode, a thermal conduction portion, and a protective membrane. The element region is equipped with a plurality of gate electrodes. The electrode is formed on a surface of the element region. The thermal conduction portion is located on a surface side of a central portion of the electrode, and is higher in thermal conductivity th…
- Who is the assignee on this patent?
- Misumi Tadashi, Toyota Motor Co Ltd
- What technology area does this patent fall under?
- Primary CPC classification H10D30/668. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Jan 06 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).