Semiconductor devices having a seal ring
US-2024413245-A1 · Dec 12, 2024 · US
US8928080B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8928080-B2 |
| Application number | US-201213554066-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jul 20, 2012 |
| Priority date | Dec 6, 2011 |
| Publication date | Jan 6, 2015 |
| Grant date | Jan 6, 2015 |
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A back-bias region is disposed on a substrate. A buried insulating layer covers the substrate and the back-bias region. A body is formed on the buried insulating layer and partially overlaps the back-bias region. A drain is in contact with the body. A gate electrode covers top and lateral surfaces of the body.
Opening claim text (preview).
What is claimed is: 1. A semiconductor device comprising: a back-bias region on a substrate; a buried insulating layer covering the substrate and the back-bias region; a body on the buried insulating layer, the body configured to partially overlap the back-bias region; a drain in contact with the body; and a gate electrode covering top and lateral surfaces of the body, wherein the back-bias region and drain are spaced apart in a horizontal direction so that the back bias…
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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