Method of manufacturing semiconductor device
US-2024321638-A1 · Sep 26, 2024 · US
US8928077B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8928077-B2 |
| Application number | US-23454908-A |
| Country | US |
| Kind code | B2 |
| Filing date | Sep 19, 2008 |
| Priority date | Sep 21, 2007 |
| Publication date | Jan 6, 2015 |
| Grant date | Jan 6, 2015 |
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In one general aspect, a power device includes an active region having a plurality of pillars of a first conductivity type alternately arranged with a plurality of pillars of a second conductivity type where the plurality of pillars of the second conductivity type in the active region each have substantially the same width. The power device includes a termination region surrounding at least a portion of the active region and having a plurality of pillars of the first conductivity type alternately arranged with a plurality of pillars of the second conductivity type where the plurality of pillars of the second conductivity type in the active region each have substantially the same width and are smaller than each width of the pillars of the second conductivity type in the termination region. The power device includes a transition region disposed between the active region and the termination region.
Opening claim text (preview).
What is claimed is: 1. A power device, comprising: an active region having a plurality of pillars of a first conductivity type alternately arranged with a plurality of pillars of a second conductivity type, the plurality of pillars of the second conductivity type in the active region each having substantially the same width; a termination region surrounding at least a portion of the active region and having a plurality of pillars of the first conductivity type alternately arrang…
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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