Power integrated circuit including series-connected source substrate and drain substrate power MOSFETs

Patent metadata

Field	Value
Publication number	US-8928075-B2
Application number	US-201213563923-A
Country	US
Kind code	B2
Filing date	Aug 1, 2012
Priority date	Aug 4, 2011
Publication date	Jan 6, 2015
Grant date	Jan 6, 2015

Abstract

A semiconductor device containing a high voltage MOS transistor with a drain drift region over a lower drain layer and channel regions laterally disposed at the top surface of the substrate. RESURF trenches cut through the drain drift region and body region parallel to channel current flow. The RESURF trenches have dielectric liners and electrically conductive RESURF elements on the liners. Source contact metal is disposed over the body region and source regions. A semiconductor device containing a high voltage MOS transistor with a drain drift region over a lower drain layer, and channel regions laterally disposed at the top surface of the substrate. RESURF trenches cut through the drain drift region and body region perpendicular to channel current flow. Source contact metal is disposed in a source contact trench and extended over the drain drift region to provide a field plate.

First claim

What is claimed is:

1. A semiconductor device, comprising:
a semiconductor substrate;
a high voltage metal oxide semiconductor (MOS) transistor, including:
a heavily doped lower drain layer in said substrate, said lower drain layer having a first conductivity type with an average doping density greater than 1×10 19 cm −3 ;
a drain drift region disposed over said lower drain layer, said drain drift region having said first conductivity type with an average doping density betw…

Assignees

• Kocon Christopher Boguslaw
• Denison Marie
• Efland Taylor
• Texas Instruments Inc

Inventors

• Kocon Christopher Boguslaw
• Denison Marie
• Efland Taylor

Classifications

• H10D84/856

  Electricity · mapped topic

• H10D64/663

  Electricity · mapped topic

• H10D64/516

  Electricity · mapped topic

• H10D64/256

  Electricity · mapped topic

• H10D62/127

  Electricity · mapped topic