Variable capacitance element
US-2024266427-A1 · Aug 8, 2024 · US
Semiconductor device
US8928072B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8928072-B2 |
| Application number | US-201313887051-A |
| Country | US |
| Kind code | B2 |
| Filing date | May 3, 2013 |
| Priority date | May 9, 2012 |
| Publication date | Jan 6, 2015 |
| Grant date | Jan 6, 2015 |
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- Title
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Abstract
Official abstract text for this publication.
Provided is a semiconductor device that can be manufactured at low cost and that can reduce a reverse leak current, and a manufacturing method thereof. A semiconductor device has: a source region and a drain region having a body region therebetween; a source trench that reaches the body region, penetrating the source region; a body contact region formed at the bottom of the source trench; a source electrode embedded in the source trench; and a gate electrode that faces the body region. The semiconductor device also has: an n-type region for a diode; a diode trench formed reaching the n-type region for a diode; a p + region for a diode that forms a pn junction with the n-type region for a diode at the bottom of the diode trench; and a schottky electrode that forms a schottky junction with the n-type region for a diode at side walls of the diode trench.
First claim
Opening claim text (preview).
What is claimed is: 1. A semiconductor device, having: a semiconductor layer of a first conductive type; a body region of a second conductive type formed in the semiconductor layer; a source region and a drain region of the first conductive type formed in the semiconductor layer so as to be separated from each other across the body region; a source trench formed in the semiconductor layer, the source trench penetrating the source region and reaching the body region; a body…
Assignees
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Classifications
- H10D84/811Primary
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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Frequently asked questions
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- What does patent US8928072B2 cover?
- Provided is a semiconductor device that can be manufactured at low cost and that can reduce a reverse leak current, and a manufacturing method thereof. A semiconductor device has: a source region and a drain region having a body region therebetween; a source trench that reaches the body region, penetrating the source region; a body contact region formed at the bottom of the source trench; a sou…
- Who is the assignee on this patent?
- Rohm Co Ltd
- What technology area does this patent fall under?
- Primary CPC classification H10D84/811. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Jan 06 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).