Integrated circuit with electrostatic discharge protection
US-2024395801-A1 · Nov 28, 2024 · US
Electronic device including a schottky contact
US8928050B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8928050-B2 |
| Application number | US-201313794103-A |
| Country | US |
| Kind code | B2 |
| Filing date | Mar 11, 2013 |
| Priority date | Mar 11, 2013 |
| Publication date | Jan 6, 2015 |
| Grant date | Jan 6, 2015 |
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- Title
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Abstract
Official abstract text for this publication.
An electronic device can include a semiconductor layer having a primary surface, and a Schottky contact comprising a metal-containing member in contact with a horizontally-oriented lightly doped region within the semiconductor layer and lying adjacent to the primary surface. In an embodiment, the metal-containing member lies within a recess in the semiconductor layer and contacts the horizontally-oriented lightly doped region along a sidewall of the recess. In other embodiment, the Schottky contact may not be formed within a recess, and a doped region may be formed within the semiconductor layer under the horizontally-oriented lightly doped region and have a conductivity type opposite the horizontally-oriented lightly doped region. The Schottky contacts can be used in conjunction with power transistors in a switching circuit, such as a high-frequency voltage regulator.
First claim
Opening claim text (preview).
What is claimed is: 1. An electronic device comprising: a first semiconductor layer having a first primary surface; a first power transistor comprising a gate electrode and a drain region that includes a horizontally-oriented lightly doped region within the first semiconductor layer and lying adjacent to the first primary surface; a Schottky contact comprising a first metal-containing member in contact with the horizontally-oriented lightly doped region; and a conductive ele…
Assignees
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Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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Frequently asked questions
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- What does patent US8928050B2 cover?
- An electronic device can include a semiconductor layer having a primary surface, and a Schottky contact comprising a metal-containing member in contact with a horizontally-oriented lightly doped region within the semiconductor layer and lying adjacent to the primary surface. In an embodiment, the metal-containing member lies within a recess in the semiconductor layer and contacts the horizontal…
- Who is the assignee on this patent?
- Loechelt Gary H, Venkatraman Prasad, Hossain Zia, and 2 more
- What technology area does this patent fall under?
- Primary CPC classification H10D89/611. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Jan 06 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).