Methods of forming semiconductor device with self-aligned contact elements and the resulting device

Patent metadata

Field	Value
Publication number	US-8928048-B2
Application number	US-201313743454-A
Country	US
Kind code	B2
Filing date	Jan 17, 2013
Priority date	Jan 17, 2013
Publication date	Jan 6, 2015
Grant date	Jan 6, 2015

Abstract

One method disclosed includes forming a final gate structure in a gate cavity that is laterally defined by sidewall spacers, removing a portion of the sidewall spacers to define recessed sidewall spacers, removing a portion of the final gate structure to define a recessed final gate structure and forming an etch stop on the recessed sidewall spacers and the recessed final gate structure. A transistor device disclosed herein includes a final gate structure that has an upper surface positioned at a first height level above a surface of a substrate, sidewall spacers positioned adjacent the final gate structure, the sidewall spacers having an upper surface that is positioned at a second, greater height level above the substrate, an etch stop layer formed on the upper surfaces of the sidewall spacers and the final gate structure, and a conductive contact that is conductively coupled to a contact region of the transistor.

First claim

What is claimed:

1. A method of forming a transistor, comprising:
forming a final gate structure in a gate cavity that is laterally defined by sidewall spacers;
removing a portion of said sidewall spacers to define recessed sidewall spacers;
removing a portion of said final gate structure to define a recessed final gate structure;
performing a conformal deposition process to form a conformal etch stop layer on at least said recessed sidewall spacers and said recessed final g…

Assignees

• Globalfoundries Inc

Inventors

• Xie Ruilong
• Cai Xiuyu

Classifications

• H10W20/077

  Electricity · mapped topic

• H10W20/069

  Electricity · mapped topic

• H10D64/021

  Electricity · mapped topic

• H10D64/017

  Electricity · mapped topic

• H10D64/015 Primary

  Electricity · mapped topic