Display apparatus
US-2024414942-A1 · Dec 12, 2024 · US
Transistor and method of fabricating the same
US8928046B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8928046-B2 |
| Application number | US-90322010-A |
| Country | US |
| Kind code | B2 |
| Filing date | Oct 13, 2010 |
| Priority date | Apr 16, 2010 |
| Publication date | Jan 6, 2015 |
| Grant date | Jan 6, 2015 |
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- Title
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Abstract
Official abstract text for this publication.
A transistor including a gate, an active stacked structure, a dielectric layer, a source and a drain. The gate is located over a first surface of the dielectric layer. The active stacked structure, including a first active layer and a second active layer, is located over a second surface of the dielectric layer. The source and the drain are located over the second surface of the dielectric layer and at two sides of the active stacked structure and extend between the first active layer and the second active layer of the active stacked structure.
First claim
Opening claim text (preview).
What is claimed is: 1. A transistor, comprising: a dielectric layer having a first surface and a second surface; a gate located on the first surface of the dielectric layer; an active stacked structure located on the second surface of the dielectric layer, wherein the active stacked structure is consisted of two layers including a first active layer and a second active layer, wherein the second active layer is a top layer of the active stacked structure, a material of the firs…
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Classifications
Electricity · mapped topic
Electricity · mapped topic
- H10D86/423Primary
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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Frequently asked questions
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- What does patent US8928046B2 cover?
- A transistor including a gate, an active stacked structure, a dielectric layer, a source and a drain. The gate is located over a first surface of the dielectric layer. The active stacked structure, including a first active layer and a second active layer, is located over a second surface of the dielectric layer. The source and the drain are located over the second surface of the dielectric laye…
- Who is the assignee on this patent?
- Yan Jing-Yi, Hung Chu-Yin, Yao Hsiao-Chiang, and 3 more
- What technology area does this patent fall under?
- Primary CPC classification H10D86/423. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Jan 06 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).