Semiconductor device including line-type active region and method for manufacturing the same

Patent metadata

Field	Value
Publication number	US-8928040-B2
Application number	US-201314142622-A
Country	US
Kind code	B2
Filing date	Dec 27, 2013
Priority date	Dec 13, 2010
Publication date	Jan 6, 2015
Grant date	Jan 6, 2015

Abstract

A semiconductor device having a line-type active region and a method for manufacturing the same are disclosed. The semiconductor device includes an active region configured in a successive line type, at least one active gate having a first width and crossing the active region, and an isolation gate having a second width different from the first width and being formed between the active gates. The isolation gate's width and the active gate's width are different from each other to guarantee a large storage node contact region, resulting in increased device operation characteristics (write characteristics).

First claim

What is claimed is:

1. A semiconductor device comprising:
an active region extending along a first direction;
at least one active gate having a first width and crossing the active region; and
first and second isolation gates having a second width different from the first width, the first and second isolation gates isolating the active region,
wherein the second width is smaller than the first width.

2. The semiconductor device according to claim 1 , wh…

Assignees

• Sk Hynix Inc

Inventors

• Kim Kyung Do

Classifications

• H10D30/6892 Primary

  Electricity · mapped topic

• H01L27/10876

  Electricity · mapped topic

• H01L29/42328 Primary

  Electricity · mapped topic

• H10B12/053 Primary

  Electricity · mapped topic