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Semiconductor device, method for manufacturing the semiconductor device, and method for controlling the semiconductor device
US8928030B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8928030-B2 |
| Application number | US-201313863374-A |
| Country | US |
| Kind code | B2 |
| Filing date | Apr 15, 2013 |
| Priority date | Oct 24, 2012 |
| Publication date | Jan 6, 2015 |
| Grant date | Jan 6, 2015 |
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Abstract
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An A-NPC circuit is configured so that the intermediate potential of two connected IGBTs is clamped by a bidirectional switch including two RB-IGBTs. Control is applied to the turn-on di/dt of the IGBTs during the reverse recovery of the RB-IGBTs. The carrier life time of an n − drift region in each RB-IGBT constituting the bidirectional switch is comparatively longer than that in a typical NPT structure device. A low life time region is also provided in the interface between the n − drift region and a p collector region, and extends between the n − drift region and the p collector region. Thus, it is possible to provide a low-loss semiconductor device, a method for manufacturing the semiconductor device and a method for controlling the semiconductor device, in which the reverse recovery loss is reduced while the reverse recovery current peak and the jump voltage peak during reverse recovery are suppressed.
First claim
Opening claim text (preview).
What is claimed is: 1. A semiconductor device comprising: a first semiconductor region of a first conductivity type, wherein the first semiconductor region is a substrate; a second semiconductor region of a second conductivity type which is selectively provided in a surface layer of one side of the first semiconductor region; a third semiconductor region of the first conductivity type which is selectively provided inside the second semiconductor region; a gate electrode whic…
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Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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Frequently asked questions
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- What does patent US8928030B2 cover?
- An A-NPC circuit is configured so that the intermediate potential of two connected IGBTs is clamped by a bidirectional switch including two RB-IGBTs. Control is applied to the turn-on di/dt of the IGBTs during the reverse recovery of the RB-IGBTs. The carrier life time of an n − drift region in each RB-IGBT constituting the bidirectional switch is comparatively longer than that in a typical NP…
- Who is the assignee on this patent?
- Fuji Electric Co Ltd
- What technology area does this patent fall under?
- Primary CPC classification H10D12/441. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Jan 06 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).