Light-emitting device
US-12155019-B2 · Nov 26, 2024 · US
US8928022B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8928022-B2 |
| Application number | US-201313934049-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jul 2, 2013 |
| Priority date | Oct 17, 2006 |
| Publication date | Jan 6, 2015 |
| Grant date | Jan 6, 2015 |
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A light-emitting device comprising: a light-emitting stacked layer having a first conductivity type semiconductor layer; a light-emitting layer formed on the first conductivity type semiconductor layer; and a second conductivity type semiconductor layer formed on the light-emitting layer; a transparent conductive oxide layer formed on the second conductivity type semiconductor layer wherein the transparent conductive oxide layer having a first portion and a second portion and the upper surface of the transparent conductive oxide layer is a textured surface; a first electrode formed on the second portion of the transparent conductive oxide layer, and a second electrode formed on the first conductivity type semiconductor layer; a planarization layer formed on the first portion of the transparent conductive oxide layer, and the second electrode; and a reflective layer formed on the planarization layer that is devoid of the first electrode and the second electrode.
Opening claim text (preview).
What is claimed is: 1. A light-emitting device, comprising: a semiconductor contact layer having a rough top surface, wherein the rough top surface comprises any two adjacent crests having a highest point respectively and a trough having a lowest point between the two adjacent crests; and a transparent current spreading layer having a top surface on the semiconductor contact layer; wherein the top surface of the transparent current spreading layer comprises any two adjacent cr…
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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