Optoelectronic device and method for manufacturing the same
US-2015318439-A1 · Nov 5, 2015 · US
US8928017B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8928017-B2 |
| Application number | US-92914911-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jan 4, 2011 |
| Priority date | Jul 26, 2010 |
| Publication date | Jan 6, 2015 |
| Grant date | Jan 6, 2015 |
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Example embodiments are directed to light-emitting devices (LEDs) and methods of manufacturing the same. The LED includes a first semiconductor layer; a second semiconductor layer; an active layer formed between the first and second semiconductor layers; and an emission pattern layer including a plurality of layers on the first semiconductor layer, the emission pattern including an emission pattern for externally emitting light generated from the active layer.
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What is claimed is: 1. A light-emitting device (LED) comprising: a first semiconductor layer of a first impurity type; a second semiconductor layer of a second impurity type; an active layer between the first and second semiconductor layers; an emission pattern layer on the first semiconductor layer, the emission pattern layer including a plurality of layers and having an emission pattern that externally emits light generated from the active layer; a metal layer under the…
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