Semiconductor light emitting device

US8928015B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-8928015-B2
Application numberUS-201314090906-A
CountryUS
Kind codeB2
Filing dateNov 26, 2013
Priority dateDec 24, 2008
Publication dateJan 6, 2015
Grant dateJan 6, 2015

How to read this patent

A practical reading order for non-experts. Skip the full description unless you need deep technical detail.

  1. Title

    What the patent document calls the invention.

  2. Abstract

    A short plain-language summary of the technical disclosure.

  3. Assignees and inventors

    Who owns or filed the patent and who is credited as inventor.

  4. Key dates

    Filing, priority, publication, and grant dates set the timeline.

  5. First independent claim

    The legal scope of protection — read this for what is actually claimed.

  6. CPC / IPC classifications

    Technology tags used to group this patent with similar filings.

  7. Citations and related patents

    Prior art links and similar publications in this corpus.

Abstract

Official abstract text for this publication.

A light emitting device including a first conductive type semiconductor layer, an active layer on the first conductive type semiconductor layer, a second conductive type semiconductor layer on the active layer, an electrode layer on the second conductive type semiconductor layer, a first electrode on the first conductive type semiconductor layer, and a second electrode on the second conductive type semiconductor layer and in an opening, the opening being in the electrode layer, wherein the second electrode has a first portion in the opening and a second portion extending from the first portion and overlapping at least a portion of the first electrode.

First claim

Opening claim text (preview).

What is claimed is: 1. A light emitting device, comprising: a first conductive type semiconductor layer; an active layer on the first conductive type semiconductor layer; a second conductive type semiconductor layer on the active layer; an electrode layer on the second conductive type semiconductor layer; a first electrode on the first conductive type semiconductor layer; and a second electrode on the second conductive type semiconductor layer and in an opening, the open…

Assignees

Inventors

Classifications

Patent family

Related publications grouped by family.

External sources

Next steps

Free tools are coming soon. Tell us what you want to track and we'll notify you.

Frequently asked questions

Answers are generated from the same data shown on this page.

What does patent US8928015B2 cover?
A light emitting device including a first conductive type semiconductor layer, an active layer on the first conductive type semiconductor layer, a second conductive type semiconductor layer on the active layer, an electrode layer on the second conductive type semiconductor layer, a first electrode on the first conductive type semiconductor layer, and a second electrode on the second conductive …
Who is the assignee on this patent?
Lg Innotek Co Ltd
What technology area does this patent fall under?
Primary CPC classification H10H20/831. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Jan 06 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).