High electron mobility transistor and method for forming the same
US-12176414-B2 · Dec 24, 2024 · US
Nitride semiconductor device
US8928003B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8928003-B2 |
| Application number | US-201113979090-A |
| Country | US |
| Kind code | B2 |
| Filing date | Oct 26, 2011 |
| Priority date | Apr 23, 2010 |
| Publication date | Jan 6, 2015 |
| Grant date | Jan 6, 2015 |
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Abstract
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The present invention prevents breakage of a gate insulating film of a MOS device and provides a nitride semiconductor device having improved reliability. An SBD metal electrode provided between a drain electrode and a gate electrode is configured to form a Schottky junction with an AlGaN layer. Further, the SBD metal electrode and a source electrode are connected and electrically short-circuited. Consequently, when an off signal is inputted to the gate electrode, a MOSFET part is turned off and the drain-side voltage of the MOSFET part becomes close to the drain electrode voltage. When the drain electrode voltage increases, the SBD metal electrode voltage becomes lower than the drain-side voltage of the MOSFET part, thus the drain side of the MOSFET part and the drain electrode are electrically disconnected by the SBD metal electrode.
First claim
Opening claim text (preview).
The invention claimed is: 1. A nitride semiconductor device comprising: a substrate; a buffer layer that is formed on the substrate; an electron traveling layer that is formed on the buffer layer and is formed of a nitride compound; an electron supplying layer that is formed on the electron traveling layer, and whose band gap energy is different than the electron traveling layer, and that is formed from at least one layer; a recess portion that is formed in a region from a…
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Electricity · mapped topic
- H10D30/015Primary
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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- What does patent US8928003B2 cover?
- The present invention prevents breakage of a gate insulating film of a MOS device and provides a nitride semiconductor device having improved reliability. An SBD metal electrode provided between a drain electrode and a gate electrode is configured to form a Schottky junction with an AlGaN layer. Further, the SBD metal electrode and a source electrode are connected and electrically short-circuit…
- Who is the assignee on this patent?
- Ueno Katsunori, Kaya Shusuke, Furukawa Electric Co Ltd, and 1 more
- What technology area does this patent fall under?
- Primary CPC classification H10D30/015. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Jan 06 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).