Semiconductor device

Patent metadata

Field	Value
Publication number	US-8927985-B2
Application number	US-201314027426-A
Country	US
Kind code	B2
Filing date	Sep 16, 2013
Priority date	Sep 20, 2012
Publication date	Jan 6, 2015
Grant date	Jan 6, 2015

Abstract

A semiconductor device includes first and second conductive layers over an insulating surface, a first insulating layer over the first and second conductive layers, first and second oxide semiconductor layers over the first insulating layer, third and fourth conductive layers over the first oxide semiconductor layer, a second insulating layer over the third and fourth conductive layers, and a fifth conductive layer over the second insulating layer. In the semiconductor device, the third conductive layer is electrically connected to the second conductive layer, the fifth conductive layer is electrically connected to the fourth conductive layer, the first oxide semiconductor layer has a region overlapping with the first conductive layer, the second oxide semiconductor layer has a region overlapping with the fifth conductive layer, and the second oxide semiconductor layer has a region intersecting with the second conductive layer.

First claim

What is claimed is:

1. A semiconductor device comprising:
a first conductive layer and a second conductive layer over an insulating surface;
a first insulating layer over the first conductive layer and the second conductive layer;
a first oxide semiconductor layer and a second oxide semiconductor layer over the first insulating layer;
a third conductive layer and a fourth conductive layer over the first oxide semiconductor layer;
a second insulating layer over the third co…

Assignees

• Semiconductor Energy Lab

Inventors

• Matsukura Hideki

Classifications

• H10D86/481

  Electricity · mapped topic

• H10D86/441

  Electricity · mapped topic

• H10D86/423 Primary

  Electricity · mapped topic

• H10D86/60

  Electricity · mapped topic

• H10D30/6755 Primary

  Electricity · mapped topic