Semiconductor device including metal-oxide-semiconductor field effect transistors and methods of fabricating the same

Patent metadata

Field	Value
Publication number	US-8927367-B2
Application number	US-201313736457-A
Country	US
Kind code	B2
Filing date	Jan 8, 2013
Priority date	Feb 27, 2012
Publication date	Jan 6, 2015
Grant date	Jan 6, 2015

Abstract

A method of fabricating a semiconductor device may include patterning a substrate to form trenches, forming a sacrificial layer to cover inner surfaces of the trenches, the sacrificial layer having a single-layered structure, forming sacrificial patterns by isotropically etching the sacrificial layer such that the sacrificial layer remains on bottom surfaces of the trenches, forming lightly doped regions in sidewalls of the trenches using the sacrificial patterns as an ion mask, removing the sacrificial patterns, and sequentially forming a gate insulating layer and a gate electrode layer in the trenches.

First claim

What is claimed is:

1. A method of fabricating a semiconductor device, comprising:
patterning a substrate to form trenches;
forming a sacrificial layer to cover inner surfaces of the trenches, the sacrificial layer having a single-layered structure;
forming sacrificial patterns by isotropically etching the sacrificial layer such that the sacrificial layer remains on bottom surfaces of the trenches;
forming lightly doped regions in sidewalls of the trenches using the sacrific…

Assignees

• Samsung Electronics Co Ltd

Inventors

• Jeong Yongsang
• Urazaev Vladimir
• Jeong Jin Ha
• Lee Changhun

Classifications

• H10D30/608

  Electricity · mapped topic

• H10D64/018

  Electricity · mapped topic

• H10D64/518

  Electricity · mapped topic

• H10D64/513

  Electricity · mapped topic

• H10D84/0179

  Electricity · mapped topic