Display apparatus and method of manufacturing the same
US-2024419215-A1 · Dec 19, 2024 · US
Method of manufacturing group-III nitride semiconductor light-emitting device, and group-III nitride semiconductor light-emitting device, and lamp
US8927348B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8927348-B2 |
| Application number | US-99223209-A |
| Country | US |
| Kind code | B2 |
| Filing date | May 12, 2009 |
| Priority date | May 14, 2008 |
| Publication date | Jan 6, 2015 |
| Grant date | Jan 6, 2015 |
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Abstract
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Provided are a method of manufacturing a group-III nitride semiconductor light-emitting device in which a light-emitting device excellent in the internal quantum efficiency and the light extraction efficiency can be obtained, a group-III nitride semiconductor light-emitting device and a lamp. Included are an epitaxial step of forming a semiconductor layer ( 30 ) so as to a main surface ( 20 ) of a substrate ( 2 ), a masking step of forming a protective film on the semiconductor layer ( 30 ), a semiconductor layer removal step of removing the protective film and the semiconductor layer ( 30 ) by laser irradiation to expose the substrate ( 2 ), a grinding step of reducing the thickness of the substrate ( 2 ), a polishing step of polishing the substrate ( 2 ), a laser processing step of providing processing marks to the inside of the substrate ( 2 ), a division step of creating a plurality of light-emitting devices ( 1 ) while forming a division surface of the substrate ( 2 ) to have a rough surface.
First claim
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The invention claimed is: 1. A method of manufacturing a group-III nitride semiconductor light-emitting device in which a semiconductor layer is formed on a substrate by sequentially laminating an n-type semiconductor layer, an emission layer and a p-type semiconductor layer, which are made of a group-III nitride semiconductor, the method comprising: an epitaxial step of epitaxially growing the group-III nitride semiconductor on a first main surface of the substrate, to form the s…
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Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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- What does patent US8927348B2 cover?
- Provided are a method of manufacturing a group-III nitride semiconductor light-emitting device in which a light-emitting device excellent in the internal quantum efficiency and the light extraction efficiency can be obtained, a group-III nitride semiconductor light-emitting device and a lamp. Included are an epitaxial step of forming a semiconductor layer ( 30 ) so as to a main surface ( 20 ) o…
- Who is the assignee on this patent?
- Sugano Susumu, Miki Hisayuki, Shinohara Hironao, and 1 more
- What technology area does this patent fall under?
- Primary CPC classification H10H20/01. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Jan 06 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).